Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

1997-02-21

1998-10-27

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257630, 257401, 257506, H01L 2900

Patent

active

058281207

ABSTRACT:
A semiconductor device equipped on the same substrate thereof with a first area isolated for device isolation by a first device isolation structure and with a second area isolated for device isolation by a second device isolation structure, wherein the thickness of the substrate inside the first area is different from the thickness of the substrate inside the second area, and the first and second device isolation structures are buried into the substrate so as to bring their tops into about the same level.

REFERENCES:
patent: 4561170 (1985-12-01), Doering et al.
patent: 4688069 (1987-08-01), Joy et al.
patent: 5164803 (1992-11-01), Ozaki et al.
patent: 5610854 (1997-03-01), Ema
patent: 5641989 (1997-06-01), Tomioha
Wakamiya et al., Fully Planarized 0.5.mu.m Technologies For 16M DRAM, IEDM-88. pp. 246-249, Dec. 1988.

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