Semiconductor light emitting device with a Mg superlattice struc

Details Semiconductor light emitting device with a Mg superlattice struc Semiconductor light emitting device with a Mg superlattice struc

1997-03-24

1998-10-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 97, 257 96, 257103, 372 43, 372 44, 372 45, H01L 3300

Patent

active

058280863

ABSTRACT:
A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

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patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5617446 (1997-04-01), Ishibashi et al.

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