Patent
1979-01-29
1981-04-14
Larkins, William D.
357 4, 357 41, 357 52, 357 59, H01L 2712, H01L 2904
Patent
active
042622999
ABSTRACT:
A monolithic semiconductor-on-insulator device includes silicon islands in spaced relation on the surface of an insulating substrate, with the spaces between the islands occupied by a passivating material which comprises a layer of a semi-insulating material having finite but low conductivity on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof. The surface of the semi-insulating material has a layer of insulating silicon dioxide thereon. The conductivity of the semi-insulating material is such that charge does not accumulate in this material adjacent to the side edges of the islands, but its conductivity is low enough so that leakage currents between devices remain below an amount which would render the circuit which uses the device non-operative.
REFERENCES:
patent: 3496037 (1970-02-01), Jackson
patent: 3617822 (1971-11-01), Kobayashi
patent: 3666548 (1972-05-01), Brack
patent: 3740280 (1973-06-01), Ronen
patent: 3791882 (1974-02-01), Ogiue
patent: 4009484 (1977-02-01), Ogiue et al.
patent: 4012762 (1977-03-01), Abe et al.
patent: 4017769 (1977-04-01), Raetzel et al.
patent: 4086613 (1978-04-01), Biet
Electronics, May 26, 1977, pp. 99-105.
Benjamin Lawrence P.
Cohen D. S.
Larkins William D.
Morris Birgit E.
RCA Corporation
LandOfFree
Semiconductor-on-insulator device and method for its manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor-on-insulator device and method for its manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor-on-insulator device and method for its manufacture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-161373