Mask modification for focal plane on contact photolithography to

Details Mask modification for focal plane on contact photolithography to Mask modification for focal plane on contact photolithography to

1996-12-30

1998-10-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

058276246

ABSTRACT:
The lower surface of a photolithographic mask contains recesses sized and adapted to receive upwardly-projecting features so that, when the mask is placed in position over the to-be-exposed and etched surface, the lower surface of the mask is in direct contact with or very closely adjacent (e.g., not more than about 5 or 6 microns above) the top of the resist layer. In the disclosed practice, the mask is quartz, the lower surface of the mask is pressed into contact with the resist before the resist is exposed, and the device being formed is a field emission device.

REFERENCES:
patent: 5620832 (1997-04-01), Sung et al.
patent: 5670296 (1997-09-01), Tsai

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