Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-02-09
1997-12-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257347, 257506, H01L 2904
Patent
active
056963866
ABSTRACT:
A method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a coating consisting mainly of aluminum nitride, semiconductor devices such as TFTs or semiconductor integrated circuits comprising said semiconductor devices are built directly or indirectly on the coating to form e.g. an active matrix liquid crystal display. A coating consisting mainly of silicon oxide may be formed on the coating consisting mainly of aluminum nitride and under said semiconductor devices or said semiconductor integrated circuits.
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T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
Costellia Jeffrey L.
Crane Sara W.
Ferguson Jr. Gerald J.
Potter Roy
Semiconductor Energy Laboratory Co,. Ltd.
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