Stress relief in epitaxial wafers

Details Stress relief in epitaxial wafers Stress relief in epitaxial wafers

1987-07-13

1988-09-06

Edlow, Martin H.

357 64, H01L 29167

Patent

active

047696893

ABSTRACT:
The specification describes an epitaxial structure designed to reduce or eliminate the bowing of semiconductor wafers due to stresses caused by lattice mismatch between a heavily boron doped substrate and a lightly doped epitaxial layer. The lattice mismatch is reduced or eliminated by doping germanium into the substrate prior to epitaxial growth.

REFERENCES:
patent: 3812519 (1974-05-01), Nakamura
Edel et al, I.B.M. Tech. Discl. Bull., vol. 13, No. 3, Aug. 1970.

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