Lateral bipolar transistor and method of producing the same

Details Lateral bipolar transistor and method of producing the same Lateral bipolar transistor and method of producing the same

1987-04-20

1988-09-06

James, Andrew J.

357 44, 357 46, 357 59, 357 92, H01L 2972, H01L 2954, H01L 2704

Patent

active

047696877

ABSTRACT:
A lateral bipolar transistor affording a good controllability for a base length is disclosed.
In fabricating a lateral bipolar transistor by forming a single crystal column and disposing heavily doped polycrystalline regions on both sides of the column, contact surfaces between the single crystal column and the heavily doped polycrystalline regions are controlled by etching of an oxide film. The etching of the oxide film can provide a device of a precision higher than attained by controlling any other element.

REFERENCES:
patent: 4333227 (1982-06-01), Horng et al.
patent: 4339767 (1982-07-01), Horng et al.
patent: 4508579 (1985-04-01), Goth et al.

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