Method of forming guard ringed schottky diode

Details Method of forming guard ringed schottky diode Method of forming guard ringed schottky diode

1996-02-02

1997-12-09

Niebling, John

Fishing, trapping, and vermin destroying

437176, 437177, 437162, 437193, 437203, H01L 2128

Patent

active

056960255

ABSTRACT:
A method of forming a guard ring for a Schottky diode is comprised of the steps of forming anode and cathode contact openings. A layer of doped material is deposited and etched to create spacers in the anode and cathode openings. The outdiffusion of dopant from the spacers is controlled to form a guard ring in the well without affecting the active area. The method can be used to create a p-type guard ring in an n-well or an n-type guard ring in a p-well. A Schottky diode constructed according to the method is also disclosed.

REFERENCES:
patent: 4414737 (1983-11-01), Menjo et al.
patent: 4691435 (1987-09-01), Anantha et al.
patent: 4874714 (1989-10-01), Eklund
patent: 4875082 (1989-10-01), Bredthauer
patent: 5179034 (1993-01-01), Mori et al.
patent: 5418185 (1995-05-01), Todd et al.
patent: 5583348 (1996-12-01), Sundaram
K.D. Beyer, "Self-Aligned Guard Ring Formation For Schottky Barrier Diodes Using Boron-Doped Oxides", IBM Tech. Discl. Bull., vol. 26, No. 3A, pp. 1180-1181, Aug. 1983.

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