Method for forming field oxide isolation film

Fishing – trapping – and vermin destroying

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H01L 2176

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active

056960220

ABSTRACT:
A method for forming a field oxide film for element isolation of a structure extending deeply in the substrate and having a step of small height, thereby exhibiting a low topology and a reduced bird's beak. The method includes the steps of forming a pattern of a mask material film for an oxidation prevention on a semiconductor substrate, locally forming an oxide film on a predetermined surface portion of the semiconductor substrate by use of an oxidation using the pattern as a mask, and removing the oxide film, thereby etching the predetermined surface portion of the semiconductor substrate while forming an undercut at a region defined beneath a side wall of the mask material film pattern, forming a lateral oxidation prevention film on the undercut disposed beneath the side wall of the mask material film pattern, and forming an oxide film for an element isolation, by use of an oxidation, on a portion of the semiconductor substrate exposed upon etching the predetermined surface portion of the semiconductor substrate.

REFERENCES:
patent: 5118641 (1992-06-01), Roberts
Martin, R., "Spacer for Improved Local Oxidation Profile", IBM Tech. Disc. Bull., 1987, vol. 12, No. 5, pp. 251-253.

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