Method of fabricating a semiconductor device with a capacitor st

Details Method of fabricating a semiconductor device with a capacitor st Method of fabricating a semiconductor device with a capacitor st

1994-12-27

1997-12-09

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 2170, H01L 2700

Patent

active

056960174

ABSTRACT:
A semiconductor integrated circuit device with a capacitor structure having a large capacitance per unit surface is disclosed, wherein a contact hole is formed in an insulator layer, a metal electrode with or without a rugged surface is formed in the contact hole by an ion beam vapor deposition of metal, and a capacitor insulator layer is formed on a surface of the metal electrode. The metal electrode is integral with a contact metal. The capacitor structure comprises the metal electrode integral with the contact metal and the capacitor insulator layer which are buried in the contact hole. The device is improved in planarization, reduction of parasitic resistance, maintenance of capacitance and mass production ability.

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