Method for forming an insulated gate field effect transistor

Details Method for forming an insulated gate field effect transistor Method for forming an insulated gate field effect transistor

1993-03-23

1997-12-09

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFI, 437174, H01L 21786

Patent

active

056960115

ABSTRACT:
In an inverted stagger type thin-film transistor, the preparing process thereof can be simplified, and the unevenness of the thin film transistor prepared thereby can be reduced. That is, disclosed is a preparing method which comprises selectively doping a semiconductor on a gate insulating film with an impurity to form source, drain, and channel forming regions, and conducting a laser annealing to them, or a preparing method which comprises selectively doping the semiconductor region with an impurity by a laser doping method.

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