Method of forming a semiconductor device including a trench

Details Method of forming a semiconductor device including a trench Method of forming a semiconductor device including a trench

1996-07-17

1997-12-09

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41DM, 437203, 437 56, 148DIG126, H01L 218234

Patent

active

056960107

ABSTRACT:
A high voltage power transistor cell is developed that provides improved RDSon performance without sacrificing breakdown performance through utilization of trench based transistor technology. A source, drain and trench are formed within a substrate. A gate is formed on the surface over a spacing between the source and the trench. A drift region is formed around the trench. An isolation region may optionally be added allowing electrical isolation between the source and the substrate. The lateral current flow feature allows multiple high voltage power transistors, electrically isolated from one another, to exist on a single semiconductor chip. The drift region formed around the trench provides RESURF transistor characteristics without sacrificing die area.

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"A Study of the Coener Effect in Trench-Like Isolated Structures", Vankemmel et al., IEEE Transactions on Electron Devices, vol. 37, No.1, Jan. 1990, pp. 168-176.
"Advanced CMOS Process Technology--Isolation Techniques", VLSI Electronics Microstructure Science, vol. 19, Chapter 4--Trench Isolation, pp. 125-129.

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