Semiconductor devices with nonplanar characteristics produced in

Details Semiconductor devices with nonplanar characteristics produced in Semiconductor devices with nonplanar characteristics produced in

1982-12-06

1984-05-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 427 87, H01S 319

Patent

active

044479042

ABSTRACT:
Semiconductor devices, e.g., semiconductor injection lasers, are fabricated via chemical vapor deposition having one or more layers of semiconductor material of predetermined lateral spatial thickness variation or tapered contour and are formed by means of pyrolyzation of vapor mixtures of semiconductor materials deposited as a layer or layers through an aperture of a mask employed during deposition thereof.

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patent: 4053350 (1977-10-01), Olsen et al.
patent: 4249142 (1981-02-01), Burnham et al.
patent: 4251298 (1981-02-01), Thompson
patent: 4256816 (1981-03-01), Dunkleberger
patent: 4335461 (1982-06-01), Streifer et al.
patent: 4371966 (1983-02-01), Scifres et al.
Samid et al., "Embedded Heterostructure Epitaxy: A Technique for Two Dimensional Thin-Film Definition", APL vol. 27, No. 7, Oct. 1, 1975, pp. 405-407.
Dupuis et al.-"Preparation & Properties of Ga.sub.1-x Al.sub.x As-GaAs Heterostructure Lasers Grown by Mo-CVD", IEEE J. of QE, QE-15(3), pp. 128-135.
Dupuis-"Ga.sub.1-x Al.sub.x As-GaAs Heterostructure Lasers Grown by Mo-CVD", Jap. J. of A.P., vol. 19, Supp. 19-1, pp. 415-423, 1980.
Mori et al.-"V-DH Laser: A Laser with a V-Shaped . . . by Mo-CVD"-Electronic Letters, vol. 16(20), pp. 785-787, 9/80.

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