Fishing – trapping – and vermin destroying
Patent
1986-12-29
1988-09-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437107, 437110, 437126, 437128, 437132, 437976, 148DIG72, 148DIG97, 148DIG160, 148DIG169, 357 16, 156610, 156612, H01L 21203, H01L 2120
Patent
active
047693410
ABSTRACT:
A semiconductor device comprising an epitaxially grown tin and Group IV compound semiconductor region on which at least one other semiconductor is grown lattice matched to the adjacent portion of the tin containing region. A large number of semiconductors may thus be grown.
REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4120706 (1978-10-01), Mason
patent: 4159214 (1979-06-01), Mason
patent: 4180825 (1979-12-01), Mason
patent: 4378259 (1983-03-01), Hasegawa et al.
patent: 4529455 (1985-07-01), Bean et al.
patent: 4630083 (1986-12-01), Yamakoshi
patent: 4675708 (1987-06-01), Onabe
Bean et al., "Pseudomorphic Growth of Ge.sub.x Si.sub.1-x on Silicon by Molecular Beam Epitaxy", Appl. Phys. Lett., 44(1), Jan. 1, 1984, pp. 102-104.
Bean, "Recent Developments in the Strained Layer Epitaxy of Germanium-Silicon Alloys", J. Vac. Sci. Technol. B 4(6), Nov./Dec. 1986, pp. 1427-1429.
Parker, The Technology & Physics of Molecular Beam Epitaxy, Plenum Publishing, New York, NY, Sep. 1985, pp. 179-181 & 667-669.
American Telephone and Telegraph Company AT&T Bell Laboratories
Bunch William
Hearn Brian E.
Laumann Richard D.
LandOfFree
Method of fabricating non-silicon materials on silicon substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating non-silicon materials on silicon substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating non-silicon materials on silicon substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1606716