Thin film field effect transistor and method of making same

Details Thin film field effect transistor and method of making same Thin film field effect transistor and method of making same

1987-03-09

1988-09-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 82, 437101, 437106, 437109, 437914, 437967, 148DIG1, 148DIG3, 148DIG122, 148DIG139, 148DIG150, 148DIG169, H01L 2704, H01L 2954

Patent

active

047693380

ABSTRACT:
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

REFERENCES:
patent: 3304469 (1967-02-01), Weiner
patent: 3924320 (1975-12-01), Altman et al.
Matsui et al., Journal. Appl Phys. 55 (6) Mar. 15, 1984 pp. 1590-1595.
Sze, S.M, "Physico of Semiconductor Devices", 2nd Edition, John Wiley & Sons, New York, pp. 250-255.

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