Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Patent
1996-03-14
1997-12-09
Dang, Thi
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
216 89, B24D 1700, G01N 2100
Patent
active
056956606
ABSTRACT:
In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.
REFERENCES:
patent: 3623813 (1971-11-01), Hacman et al.
patent: 3771880 (1973-11-01), Bennett
patent: 4450652 (1984-05-01), Walsh
patent: 4462860 (1984-07-01), Szmanda
patent: 4569717 (1986-02-01), Ohgami et al.
patent: 4611919 (1986-09-01), Brooks, Jr. et al.
patent: 4618262 (1986-10-01), Maydan et al.
patent: 4717446 (1988-01-01), Nagy et al.
patent: 4753530 (1988-06-01), Knight et al.
patent: 4767495 (1988-08-01), Nishioka
patent: 4851311 (1989-07-01), Millis et al.
patent: 4953982 (1990-09-01), Ebbing et al.
patent: 4998021 (1991-03-01), Mimasaka
patent: 5036015 (1991-07-01), Sandhu
patent: 5046849 (1991-09-01), Severin et al.
patent: 5081796 (1992-01-01), Schultz
patent: 5189490 (1993-02-01), Shetty et al.
patent: 5190614 (1993-03-01), Leach et al.
patent: 5196353 (1993-03-01), Sandhu
patent: 5229303 (1993-07-01), Donnelly, Jr. et al.
patent: 5240552 (1993-08-01), Yu et al.
patent: 5270222 (1993-12-01), Moslehi
Marcoux, P.J., "Methods of Endpoint Detection for Plasma Etching," Solid-State Technology, vol. 24, No. 4, Port Washington, N.Y., U.S., pp. 115-122 (Apr. 1981).
"RD27270 GaAs Film Monitoring," Research Disclosure, p. 755 (Dec. 1986).
Severin et al., "Applications of Light Guides in Process Control," Philips Technical Review, vol. 43, No. 3, Jan. 1987, pp. 58-60.
Dang Thi
Luxtron Corporation
LandOfFree
Optical techniques of measuring endpoint during the processing o does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical techniques of measuring endpoint during the processing o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical techniques of measuring endpoint during the processing o will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1604806