Process for producing a semiconductor substrate

Details Process for producing a semiconductor substrate Process for producing a semiconductor substrate

1994-12-28

1997-12-09

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 2, 117 4, 117 7, C30B 2522

Patent

active

056955570

ABSTRACT:
A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.

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J. Haisma, et al., "Silicon-On-Insulator Wafer Bonding--Wafer Thinning Technological Evaluations," Japanese Journal Of Applied Physics, vol. 28, 1989, pp. 1426-1443.
Abe, et al. "Fabrications and Bonding Strengths of Bonded Silicon-Quartz Wafers," (Extended Abstracts of the 1992 Int'l Conference on Solid State Devices and Materials, Aug. 26-28, 1992), pp. 437-439.

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