Semiconductor device with operating voltage coupling region

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 41, 357 43, 357 23, 307304, H01L 2702

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044764790

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the substrate. In the layer are formed a first semiconductor region of the first conductivity type, having a low impurity concentration and formed deep; and a second semiconductor region in a surface area of the layer including the surface of the first semiconductor region. The second region has an impurity concentration higher than that of the first region and formed shallower than it. A power source voltage terminal is connected to the substrate and supplies a voltage applied thereto to the second region through the substrate and the layer.

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patent: 4225877 (1980-09-01), Miles et al.
patent: 4327368 (1982-04-01), Uchida
Capece, R. P., "Older Processes Revamped as New Arrivals Extend Performance Limits" Electronics, pp. 109-115, Sep. 1979.
Ghafghaichi et al., "Complementary Bipolar FET Structure" IBM Tech. Discl. Bull., vol. 16, No. 6, pp. 1702-1703, Nov. 1973.
O. Minato, et al., "Buried J-FET Powered Static RAM Cell", Digest of Technical Papers: Eleventh Conference on Solid State Devices, Tokyo 159 (1979).

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