Semiconductor nonvolatile memory with resonance tunneling

Details Semiconductor nonvolatile memory with resonance tunneling Semiconductor nonvolatile memory with resonance tunneling

1995-07-11

1997-02-18

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 25, 257 68, 257321, 257324, 257410, 257411, H01L 2906

Patent

active

056043570

ABSTRACT:
A semiconductor device comprising a substrate having thereon a capacitance part and an electrode, the capacitance part having two storage regions for conductive carriers, the storage regions having therebetween a first barrier region of a multi-tunneling structure, a second barrier region being provided among the storage region, semiconductor substrate and electrode, the first barrier region comprising two tunneling barriers and a low barrier region interposed therebetween, so that when the conductive carriers are moved between the storage regions to store memory by use of polarization characteristic, high voltage makes higher probability of conductive carrier shift and low voltage lower probability of the carrier shift in synergistic manner, whereby the semiconductor device having merits of writing, erasing and reading characteristic in DRAMs and flash EEPROMs memories.

REFERENCES:
patent: 5319229 (1994-06-01), Shimoji et al.

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