Method of manufacturing coulamb blockade element using thermal o

Details Method of manufacturing coulamb blockade element using thermal o Method of manufacturing coulamb blockade element using thermal o

1995-10-20

1997-02-18

Niebling, John

Fishing, trapping, and vermin destroying

437 40, 437228, 437239, H01L 2128

Patent

active

056041543

ABSTRACT:
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The narrow wire portion serves as a conductive island for confining a charge. The first and second electrode portions are formed to be connected to the two ends of the narrow wire portion and are wider than the narrow wire portion. Each of the first and second electrode portions has constrictions on at least one of the upper and lower surfaces thereof, which make a portion near the narrow wire portion thinner than the narrow wire portion.

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