Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1995-02-09

1997-02-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 36, 437228, 148DIG106, 148DIG150, H01L 2186, H01L 218232

Patent

active

056041390

ABSTRACT:
In forming a thin film transistor (TFT) having an offset structure or a lightly doped drain (LDD) structure, a blocking material having a lower etching rate than that of a material constructing a gate electrode is formed. By using the blocking material as a mask, a gate electrode material is side-etched selectively to form gate electrodes. The blocking material is processed selectively and remains in a drain region side. Also, an offset region or an LDD region is formed under the blocking material by performing an impurity ion implantation. On the other hand, after the gate electrodes are formed, a resist is added and then light exposure is performed from a source region side using a light blocking material as a mask, so that the resist remains in a drain region side of the gate electrode. Also, by implanting an impurity ion, an offset region or an LDD region is formed in the drain region side.

REFERENCES:
patent: 4523368 (1985-06-01), Feist
patent: 4956308 (1990-09-01), Griffin et al.
patent: 4997779 (1991-03-01), Kohno
patent: 5227321 (1993-07-01), Lee et al.
patent: 5264383 (1993-11-01), Young
patent: 5385854 (1995-01-01), Batra et al.

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