Method of forming green light emitting diode in silicon carbide

Details Method of forming green light emitting diode in silicon carbide Method of forming green light emitting diode in silicon carbide

Filed on

1994-08-12

Date issued

1997-02-18

Examiner

Bowers, Jr., Charles L.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 23, 437 25, 437100, 437905, 148DIG148, H01L 2124, H01L 21329

Type

Patent

Status

active

Patent number

056041357

Description

ABSTRACT:
A light emitting diode is disclosed that emits in the green portion of the visible spectrum, along with a method of producing the diode. The light emitting diode comprises a 6H silicon carbide substrate having a planar surface inclined more than one degree off axis toward one of the <11 20> directions; an ohmic contact to the substrate; a first epitaxial layer of 6H silicon carbide on the inclined surface of the substrate and having a first conductivity type; a second epitaxial layer of 6H silicon carbide on the first layer and having the opposite conductivity type for forming a p-n junction between the first and second layers; and an ohmic contact to the second epitaxial layer. The diode produces a peak wavelength of between about 525 and 535 nanometers with a spectral half width of no more than about 90 nanometers.

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