Method for forming silicon oxide layer

Details Method for forming silicon oxide layer Method for forming silicon oxide layer

1995-06-01

1997-08-12

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

H01L 21316

Patent

active

056565160

ABSTRACT:
A process for forming a silicon oxide film having excellent TZDB and TDDB characteristics and reduced in defects, the process comprising forming a silicon oxide film on a semiconductor substrate by means of wet oxidation; heat treating the silicon oxide film in an inert gas atmosphere containing a halogen element; and nitriding the resulting silicon oxide film. Preferably, nitriding is effected in a gaseous N.sub.2 O atmosphere. Otherwise, heat treatment in a gaseous N.sub.2 O atmosphere may be performed after nitriding the silicon oxide film in a gaseous NH.sub.3 atmosphere.

REFERENCES:
patent: 4438157 (1984-03-01), Romano-Moran
patent: 5210056 (1993-05-01), Pong et al.
patent: 5225355 (1993-07-01), Sugino et al.
patent: 5244843 (1993-09-01), Chau et al.
patent: 5254506 (1993-10-01), Hori
patent: 5290718 (1994-03-01), Fearon et al.
patent: 5296411 (1994-03-01), Gardner et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5393686 (1995-02-01), Yeh et al.
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5506178 (1996-04-01), Suzuki et al.

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