Split gate EFET and circuitry

Details Split gate EFET and circuitry Split gate EFET and circuitry

1982-06-21

1986-03-04

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 357 234, 357 238, 357 2314, 357 39, 357 43, 357 86, H03K 17687

Patent

active

045742090

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET. This enables the gate to be referenced in common to one of the source regions in the OFF state while still affording high blocking voltage capability. A multicell matrix array is also disclosed.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4152714 (1979-05-01), Henerickson et al.
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4414560 (1983-11-01), Lidow
J. Tihanyi, "Funct. Integ. of Power MOS and Bipolar Devices," Proc. 1980 IEEE IEDM Conf., Dec. 1980, pp. 75-78.
"A Parametric Study of Power MOSFETs", C. Hu, IEEE Electron Device Conference; Paper CH 1461-3/79, 0000-0385.
IEEE Transactions Electron Devices, vol. Ed-25; #10; Oct., 1978.
"UMOS Transistors on (110) Silicon", Ammar & Rogers Transactions IEEE; Ed-27; May, 1980; pp. 907-914.

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