Semiconductor device having a metal-fiber composite material ele

Details Semiconductor device having a metal-fiber composite material ele Semiconductor device having a metal-fiber composite material ele

1980-05-29

1983-09-06

Larkins, William D.

357 38, 357 55, 357 67, 357 68, 357 72, H01L 2348, H01L 2952

Patent

active

044032420

ABSTRACT:
A semiconductor device using a metal-fiber composite material as an electrode is disclosed. A semiconductor substrate may be a thyristor substrate of a center gate structure and a cathode electrode comprises a lower piece made of copper matrix-carbon fiber composite material which is ohmic-contacted to an n-emitter layer, and an upper piece made of copper which contacts the lower piece. The lower piece has an opening to allow the passage of a gate lead through it while the upper piece has a channel which leads to the lower piece and through which the gate lead extends. The semiconductor substrate is molded by epoxy resin extending from an anode electrode to a cathode electrode.

REFERENCES:
patent: 3519896 (1970-07-01), Kelley
patent: 3654529 (1972-04-01), Lord
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 4041523 (1977-08-01), Vogt
patent: 4156250 (1979-05-01), Trap
patent: 4196442 (1980-04-01), Kuniya et al.

Affiliated with

Also associated with

Rating

Semiconductor device having a metal-fiber composite material ele does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a metal-fiber composite material ele, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a metal-fiber composite material ele will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1594672