Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1981-05-15
1983-09-06
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307296A, H03L 500, H03K 17687
Patent
active
044031580
ABSTRACT:
An improved substrate bias generator for MOS integrated circuits is described. The generator includes circuitry for generating two trains of periodic pulses which are approximately phase opposite, one of the pulse trains being slightly delayed as compared to the other pulse train. The two pulse trains are applied to a pumping circuit which generates a target voltage and initially transfers a positive charge into the substrate, and thereafter transfers a positive charge out of the substrate. The positive charge transferred out of the substrate is greater than the positive charge transferred into the substrate when the absolute value of the potential on the substrate is less than the target voltage. Otherwise, a net positive charge is transferred into the substrate. In this manner, the absolute value of the potential on the substrate is driven towards the target voltage.
REFERENCES:
patent: 4229667 (1980-10-01), Heimbigner et al.
patent: 4307333 (1981-12-01), Hargrove
patent: 4311923 (1982-01-01), Luscher et al.
patent: 4322675 (1982-03-01), Lee et al.
patent: 4336466 (1982-06-01), Sud et al.
Harroun, "Substrate Bias Voltage Control", IBM Tech. Disc. Bull., vol. 22, No. 7, 12-1979, pp. 2691-2692.
Anagnos Larry N.
Hudspeth David R.
Inmos Corporation
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