Power semiconductor device

Details Power semiconductor device Power semiconductor device

1988-05-13

1990-08-28

James, Andrew J.

357 71, H01L 2354, H01L 2348

Patent

active

049530038

ABSTRACT:
In a pressure-contacted power semiconductor device, a series of metallization layers provide a pressure-contacting electrode comprising a titanium layer upon a semiconductor body, and a copper layer over the titanium layer. To prevent oxidation of the surface of the copper layer at least one additional metallization layer is arranged over the copper layer.

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IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, "Diffusion Barriers for CU".
Standard Search Report, File RS 78498 DE.

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