Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-11-16
1984-10-09
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 148 15, 148187, 357 43, 357 91, H01L 2122, H01L 21263
Patent
active
044752792
ABSTRACT:
A method for producing a monolithic integrated circuit having at least a pair of complementary field effect transistors and at least one bipolar transistor is described. A stripe of a relatively thin oxide layer formed during the gate oxide process for the field effect transistors separates the emitter region area and collector contact region area of the bipolar transistor. During a separate masked ion implantation step, the base zone doping material of the bipolar transistor is implanted. The emitter zone is diffused from a polycrystalline emitter electrode formed during the processing of the gate electrodes.
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IT&T Industries, Inc.
Lenkszus Donald J.
Roy Upendra
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