Semiconductor integrated circuit having signal level conversion

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307450, 3072963, 307270, 307264, 357 238, 357 2311, 357 2312, 365226, H03K 502, H03K 1708, H03K 1728, H03K 17284

Patent

active

049528254

ABSTRACT:
A semiconductor integrated circuit having a signal level converter is disclosed. The converter includes a plurality of first insulated gate field effect transistors each having a thin gate insulating film and formed on a low voltage or a ground voltage line side and a plurality of second insulated gate field effect transistors each having a thick gate insulating film and formed on a high voltage power supply line side.

REFERENCES:
patent: 4441035 (1984-04-01), Demetriou
patent: 4469959 (1984-09-01), Luke et al.
patent: 4469960 (1984-09-01), Raghunathan
patent: 4482824 (1984-11-01), Tzeng
patent: 4716313 (1987-12-01), Hori et al.

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