Transistor having a superlattice

Details Transistor having a superlattice Transistor having a superlattice

1985-10-11

1987-09-29

Edlow, Martin H.

357 232, 357 237, 357 16, H01L 2712

Patent

active

046971971

ABSTRACT:
A transistor has a superlattice in the channel region. The superlattice has alternate interleaved layers of undoped wide and narrow bandgap materials with the layers extending in a direction parallel to the channel region. Preferably a narrow band gap layer is adjacent a gate insulator to provide maximum increase in mobility.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4203123 (1980-05-01), Shanks
patent: 4590507 (1986-05-01), Capasso
"Observation of Confined Electronic States in Ge.sub.x Si.sub.1-x /Si Strained-Layer Superlattices", F. Cerdeira et al., Physical Review B, vol. 31, No. 2, Jan. 15, 1985, pp. 1202 to 1204.
"Amorphous Semiconductor Superlattices", B. Abeles et al., Physical Review Letters, vol. 31, No. 2, Nov. 21, 1983, pp. 2003 to 2006.

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