Protective layer for high voltage devices

Details Protective layer for high voltage devices Protective layer for high voltage devices

1991-05-16

1992-04-21

James, Andrew J.

357 52, 357 53, H01L 2934

Patent

active

051073234

ABSTRACT:
A semi-insulating layer is formed over a high voltage device in order to protect the device substrate from charge buildup. A layer comprising silicon oxynitride is deposited over the semi-insulating layer in order to prevent arcing between device electrodes and provide corrosion resistance.

REFERENCES:
patent: 4009483 (1977-02-01), Clark
patent: 4097889 (1978-06-01), Kern et al.
patent: 4365264 (1982-12-01), Mukai et al.
patent: 4532022 (1985-07-01), Takasaki et al.
patent: 4717631 (1988-01-01), Kaganowicz et al.
patent: 4901133 (1990-02-01), Curran et al.
Osenbach, J. W. et al., "A Model Describing the Electrical Behavior of a-SiN:H Alloys", J. Appl. Phys. 15 Aug. 1986, pp. 1408-1416.
Sze, S. M., Physics of Semiconductor Devices, 2nd ed., John-Wiley 1981, p. 852.

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