Method and apparatus for improvement of interconnection capacita

Details Method and apparatus for improvement of interconnection capacita Method and apparatus for improvement of interconnection capacita

1991-02-01

1992-04-21

James, Andrew J.

357 52, H01L 2972, H01L 2934

Patent

active

051073200

ABSTRACT:
A method and apparatus for reducing interconnection capacitance. A lightly doped buried layer is provided in or on a substrate below a field oxide region. The capacitance of an interconnect on the field oxide is significantly reduced by the lightly doped buried layer. When using a p-type substrate, the lightly doped buried layer may, for example, be a lightly doped (10.sup.13 /cm.sup.3) n-type region. Junction capacitance of, for example, a bipolar transistor is also reduced.

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