MIS type diamond field-effect transistor with a diamond insulato

Details MIS type diamond field-effect transistor with a diamond insulato MIS type diamond field-effect transistor with a diamond insulato

1991-03-12

1992-04-21

Hille, Rolf

Fishing, trapping, and vermin destroying

357 22, 357 16, 437100, H01L 2978

Patent

active

051073153

ABSTRACT:
Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.

REFERENCES:
patent: 4863529 (1989-09-01), Imai et al.
patent: 4929986 (1990-05-01), Yoder
Appl. Phys. Lett. 46 (2), 15 Jan. 1985, "Growth of Diamond Thin Films by Electron Assisted Chemical Vapor Deposition" by Sawabe et al., pp. 146-147.

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