Process for fabricating charge-coupled device with reduced surfa

Details Process for fabricating charge-coupled device with reduced surfa Process for fabricating charge-coupled device with reduced surfa

1989-03-31

1990-08-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437937, 437941, H01L 21476.3, H01L 29796, H01L 21339

Patent

active

049525239

ABSTRACT:
To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator layer, and reducing the surface state at the interface between said semiconductor layer and said insulator layer at least over its areas underlying the transfer electrodes.

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Snow et al., Conf. Proc. Soc. Photo-Optical Instrum. Engr., vol. 116, Solid State Imaging Dev. (1977), pp. 2-8.

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