Method of manufacturing semiconductor devices

Fishing – trapping – and vermin destroying

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437229, 437187, 437195, 1566591, 148DIG51, H01L 2100, H01L 2102, H01L 21306, H01L 21465

Patent

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048762237

ABSTRACT:
A method of manufacturing a semiconductor device whereby a wiring material is filled within a recess of an insulating film, with the upper surface of the wiring material being uneven, a coating film being evenly deposited on the wiring material, the wiring material and the coating film being etched with tetra-methyl-guanidine having the same etching speed with respect to the wiring material and the coating film in such a manner that the upper surface of the wiring material filled within the recess is made substantially flat and substantially flush with the upper surface of the insulating film. A tetra-methyl-guanide may be used which has a higher etching speed with respect to the wiring material than the coating film. In this case, the wiring material has an indentation above the recess, and the coating film is thick above the recess and thin above the insulating film. Therefore, the wiring material within the recess is etched in such a manner that the upper surface of the wiring material within the recess is made flat and substantially flush with the upper surface of the insulating film.

REFERENCES:
patent: 4290668 (1981-09-01), Ellis et al.

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