Process for fabricating complimentary semiconductor devices havi

Details Process for fabricating complimentary semiconductor devices havi Process for fabricating complimentary semiconductor devices havi

1987-10-01

1989-10-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG53, 148DIG135, 148 333, 156644, 156657, 156613, 357 42, 357 55, 437 56, 437 62, 437 70, 437 86, 437974, H01L 21265, H01L 2120

Patent

active

048762121

ABSTRACT:
A process for fabricating complimentary semiconductor devices having pedestal structures wherein both PNP and NPN transistors are formed simultaneously on the same substrate. After polysilicon layers have been patterned and etched, various polysilicon regions are doped with a plurality of conductivity types. This allows for there to be both P+ and N+ regions in the same polysilicon layer thereby enabling complimentary PNP and NPN transistors to be formed using a limited number of processing steps.

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