Method of making trench type dynamic random access memory device

Details Method of making trench type dynamic random access memory device Method of making trench type dynamic random access memory device

1991-02-04

1992-04-21

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437162, 437228, 437919, H01L 2170

Patent

active

051067749

ABSTRACT:
A dynamic random access memory is disclosed which includes a trench type memory cell having a transistor formed in a semiconductive substrate, and a capacitor arranged in a trench formed in the substrate and having a trench structure. The capacitor includes an impurity-doped semiconductive layer formed on the substrate so as to surround the trench and having a conductivity type opposite to that of the substrate, a first capacitor electrode formed in the trench, and a second capacitor electrode having a portion insulatively stacked with said first capacitor electrode in the trench.

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patent: 4645564 (1987-02-01), Morie et al.
patent: 4676847 (1987-06-01), Lin
patent: 4755486 (1988-07-01), Treichel et al.
patent: 4782036 (1988-11-01), Becker et al.
J. D. Plummer, "Process Physics, Implications for Manufacturing of Submicron Silicon Devices", Solid State Technology, Mar. 86, pp. 61-66.

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