Process and material for semiconductor photomask fabrication

Details Process and material for semiconductor photomask fabrication Process and material for semiconductor photomask fabrication

1974-02-28

1976-04-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

204164, 252 792, B29C 1708, C23F 102, C09K 1304

Patent

active

039517098

ABSTRACT:
A process step and material for use in the manufacture of semiconductor photomasks. To facilitate the etching of unmasked chromium, gold, and other metals capable of forming oxychloride derivatives on preselected portions of a substrate material, the material is exposed to a low pressure rf generated "cold" plasma (under 300.degree.C) produced from a homogeneous gaseous mixture of oxygen and a halogen containing compound.

REFERENCES:
patent: 2689217 (1954-09-01), Cotton
patent: 3419351 (1968-12-01), Zirngibl et al.
patent: 3429793 (1969-02-01), Hellund
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3481703 (1969-12-01), Zirngibl et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3654108 (1972-04-01), Smith, Jr.
patent: 3668095 (1972-06-01), Hisao Katto et al.
patent: 3795557 (1974-03-01), Jacob

Affiliated with

Also associated with

Rating

Process and material for semiconductor photomask fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process and material for semiconductor photomask fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and material for semiconductor photomask fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1584915