Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1974-10-15

1976-04-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

29571, 29578, 29579, 156 11, 156 13, 156 17, 156 18, 357 23, 427 89, 427 91, H01L 2128, H01L 21302

Patent

active

039517080

ABSTRACT:
A semiconductor device having a pair of laterally spaced multiple-layer metal films, each located in a different vertically-spaced parallel plane on a body of a single crystalline semiconductor material and a channel between the spaced edges of the pair of metal films. The edges of the pair extend in cantilever fashion over the channel. First and second laterally spaced Schottky-barrier metal films are located in the channel and form gate contacts. The first metal film is located completely beneath the uppermost multiple-layer film. The second metal film is located substantially below an aperture formed between the pair of multiple-layer metal films. A contact pad for the first film is on the outside of the channel near one end thereof, and a contact pad for the second film is located near the other end. The Schottky-barrier films are typically less than 0.8 micrometers wide. In making the semiconductor device, the two Schottky-barrier films are electrically isolated by depositing the first film from an angle onto a portion of the bottom of the channel beneath the uppermost cantilevered film and removing a part of this first film at the end away from its contact and by depositing the second film from a position above the aperture formed by the cantilevered films.

REFERENCES:
patent: 3761785 (1973-09-01), Pruniaux
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 3851379 (1974-12-01), Gutneckt et al.
patent: 3898353 (1975-08-01), Napoli et al.

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