Semiconductor device with interconnect substrates

Details Semiconductor device with interconnect substrates Semiconductor device with interconnect substrates

1994-09-02

1996-01-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257691, 257724, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

054882567

ABSTRACT:
A hybrid IC has a metal base 1, a control element interconnect substrate 2 having a thin wiring pattern, and a power element interconnect substrate 3 having a thick wiring pattern. The interconnect substrates 2 and 3 are mounted on the metal base 1. Extensions 13 protrude from the wiring pattern on the interconnect substrate 3, to electrically connect the interconnect substrate 3 to the interconnect substrate 2. This structure never complicates manufacturing processes and enables the interconnect substrates 2 and 3 to be separately tested before final assembling work, thereby improving productivity.

REFERENCES:
patent: 5291005 (1994-03-01), Arai et al.
patent: 5313095 (1994-05-01), Tagawa et al.
patent: 5317194 (1994-05-01), Sako

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