Through-field implant isolated devices and method

Details Through-field implant isolated devices and method Through-field implant isolated devices and method

1987-04-15

1989-12-26

Clawson, Jr., Joseph E.

357 50, 357 52, 357 90, 357 91, H01C 2977

Patent

active

048901474

ABSTRACT:
Preferred embodiments include channel stop implants for CMOS devices by through field boron implants (152) after the field oxide (144, 145) has been grown and with the implant depth determined by the thin portions of the field oxide (145). Junction (154) breakdown is preserved by channeling the implant (152) to penetrate far below the junctions (154).

REFERENCES:
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4697332 (1987-10-01), Joy et al.
patent: 4716451 (1987-12-01), Hsu et al.

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