Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-08-13
1983-06-14
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576T, 29577C, 148 15, 148191, 357 86, H01L 21268, H01L 21322
Patent
active
043875033
ABSTRACT:
A laser programmable logic switch (22) includes a fusible link (28), an output node (26) and a transistor (24) which is fabricated to be in the off state. When it is desired to have the output node (26) at a low logic state, the circuit (22) is left unchanged. But if it is determined that the output node (26) should be at a high logic level state, the fusible link (28) is opened by a first laser pulse. A second laser pulse is then applied to transistor (24) to cause damage to the structure of the transistor (24). The transistor (24) can be damaged in any of a number of modes which result in the formation of a conducting path between the output node (26) and the power terminal V.sub.cc. Unlike conventional laser switch circuits, the circuit (22) does not draw static power under any conditions thereby reducing power consumption by the integrated circuit utilizing such a laser switched gate. In a further embodiment a single transistor (90) fabricated in a nonconducting state is connected between first and second nodes (92, 94) but when damaged by a laser pulse the transistor (90) provides a low impedance connection between the nodes (92, 94). In a still further embodiment a transfer (110) is provided with a fusible link gate (110a), and is fabricated to be in an off state. A laser beam programs the transistor (110) by simultaneously opening the fusible link gate (110a) and altering the structure of the transistor to provide a low impedance path between the drain and source terminals thereof.
REFERENCES:
patent: 3206340 (1965-09-01), Stelmak
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patent: 3770520 (1973-11-01), Kabaya et al.
patent: 3865651 (1975-02-01), Arita
Ohkura, M. et al., "Single Pulse Laser Annealing of a Double-Implanted Layer" in Japanese J. of Applied Physics, vol. 19, No. 2, Feb. 1980, pp. 183-186.
Tsu, R. et al., "Order-Disorder Transition . . . Laser Irradiation" in Physical Review Letters, vol. 12, No. 20, May 14, 1979, pp. 1356-1358.
Aswell Cecil J.
Chapman Hugh N.
Mostek Corporation
Rutledge L. Dewayne
Schiavelli Alan E.
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