Method of fabricating an MOS dynamic RAM with lightly doped drai

Details Method of fabricating an MOS dynamic RAM with lightly doped drai Method of fabricating an MOS dynamic RAM with lightly doped drai

1980-12-17

1983-01-04

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148187, H01L 2126

Patent

active

043666132

ABSTRACT:
A method of manufacturing LDD MOS FET RAM capable of delineating short (less than 1 micrometer) lightly doped drain regions. An N.sup.- implant is effected between gate electrodes and field oxide insulators, before the N.sup.+ implant. An insulator layer is then deposited also prior to N.sup.+ ion implantation. Reactive ion etching of the layer leaves narrow dimensioned insulator regions adjacent the gate electrode which serves to protect portions of the N.sup.- impurity region during the subsequent N.sup.+ implant. These protected regions are the lightly doped source/drain regions.

REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 3997367 (1976-12-01), Yau
patent: 4038107 (1977-04-01), Marr et al.
patent: 4160683 (1979-07-01), Roche
patent: 4182636 (1980-01-01), Dennard et al.
patent: 4198250 (1980-04-01), Jecmen
patent: 4209349 (1980-06-01), Ho et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4280271 (1981-07-01), Lou et al.
patent: 4282646 (1981-08-01), Fortino et al.
patent: 4282648 (1981-08-01), Yu et al.
patent: 4287661 (1981-09-01), Stoffel
patent: 4290186 (1981-09-01), Klein et al.
Bassous, E. et al; "Self-Aligned Polysilicon Gate Mosfets with Tailored Source and Drain Profiles", IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, pp. 5146-5147.

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