Sense amplifier using different threshold MOS devices

Details Sense amplifier using different threshold MOS devices Sense amplifier using different threshold MOS devices

1982-01-25

1984-07-10

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307450, 365208, H03K 524, G11C 706

Patent

active

044594976

ABSTRACT:
A sense amplifier quickly charges a column line to a first predetermined voltage level with first, second and third transistors and then charges the column to a second predetermined voltage by using only the second and third transistors. The second and third transistors continue charging to the second predetermined voltage by virtue of having a lower threshold voltage than the first transistor. If a selected memory cell in the column is in a conducting state, the column charges to only the first predetermined voltage for detection as a logic "0". If the selected memory cell in the column is in a non-conducting state, the column continues charging to the second predetermined voltage for detection as a logic "1".

REFERENCES:
patent: 3560765 (1971-02-01), Kubinec
patent: 4179626 (1979-12-01), Oehler
patent: 4239994 (1980-12-01), Stewart
patent: 4365172 (1982-12-01), Prater
patent: 4386284 (1983-05-01), Wacyk
patent: 4388541 (1983-06-01), Giebel
Wong et al., "A 45ns Fully-Static 16K MOS ROM", 1981 IEEE-ISSCC, Digest of Technical Papers, pp. 150-151, 2/19/1981.
Giebel, "An 8K EEPROM Using the SIMOS Storage Cell", IEEE-ISSC, vol. SC-15, No. 3, pp. 311-315, 6/1980.

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