Patent
1985-01-17
1986-05-06
James, Andrew J.
357 15, 357 56, H01L 2980, H01L 2908, H01L 2940
Patent
active
045875405
ABSTRACT:
The edge of a conformal coating over a mesa is usable to define a shoulder in the vertical dimension of the mesa which in turn is used for positioning. Structures are provided that permit electrodes at precise locations along the length of a mesa. A vertical field effect transistor is set forth with a mesa serving as the channel and the gate electrode positioned at a shoulder formed by the edge dimension of a coating on the sides of the mesa.
REFERENCES:
patent: 2814853 (1957-12-01), Paskell
patent: 3535170 (1970-10-01), Hughes
patent: 3855608 (1974-12-01), George et al.
patent: 3938241 (1976-02-01), George et al.
patent: 3999281 (1976-12-01), Goronkin et al.
patent: 4099987 (1978-07-01), Jambotkar
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4236166 (1980-11-01), Cho et al.
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4377899 (1983-03-01), Otani et al.
Alley et al., "Recent Experimental Results on Permeable Base Transistor" IEDM Technical Digest 24.1, pp. 608-612, Dec. 1980.
Dekkers et al., "Buried Channel GaAs MESFET's Scattering Parameter and Linearity Dependence on the Channel Doping Profile," IEEE Trans. on Electron Devices, vol.-ED28, No. 9, Sep. 1981, pp. 1065-1070.
International Business Machines - Corporation
James Andrew J.
Lamont John
Riddles Alvin J.
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