Fishing – trapping – and vermin destroying
Patent
1988-10-03
1989-12-26
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437911, 437154, 148DIG88, 357 22, 357 30, H01L 21256
Patent
active
048898260
ABSTRACT:
A static induction transistor has in a surface region of a first type of high-resistance semiconductor a source region formed by a first type of diffusion layer and a gate region which surrounds said source region from at least two directions and which is formed by a second type of diffusion layer which is diffused deeper than the layer of source region, the static induction transistor also having a first or second type of impurity layer formed immediately beneath the source region thereof. A second type of impurity layer is further formed in the surface region of the first type of high-resistance semiconductor outside of the gate region. Furthermore, a first type of impurity layer is formed in the surface region of the first type of high-resistance semiconductor, or a first or a second type of impurity layer is formed in the surface region of the first type of high-resistance semiconductor between the source region and the gate region at the same depth as or shallower than the source region.
As a result, the pinch-off voltage of the transistor can be easily controlled. Furthermore, photoelectric charge generated adjacent to the surface is immediately captured in the gate region without any loss, whereby generation of residual images can be prevented. Furthermore, extension of a depletion layer can be restricted as far as possible, whereby a thermally excited charge generated in the depletion layer can be reduced, causing dark currents to be restricted. Consequently, the S-N ratio can be improved.
REFERENCES:
patent: 4132996 (1979-01-01), Baliga
patent: 4270059 (1981-05-01), Nishizawa et al.
patent: 4326209 (1982-04-01), Nishizawa et al.
patent: 4406052 (1983-09-01), Cogan
patent: 4551909 (1985-11-01), Cogan et al.
patent: 4596605 (1986-06-01), Nishizawa et al.
Hearn Brian E.
Nguyen Tuan
Olympus Optical Co,. Ltd.
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