Fishing – trapping – and vermin destroying
Patent
1988-12-28
1989-12-26
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 32, 437944, 437917, 357 35, 357 71, 148DIG100, 148DIG10, H01L 2972, H01L 2128
Patent
active
048898244
ABSTRACT:
A method of manufacturing a hetero-junction bipolar transistor, especially of gallium arsenide, comprising the step of forming superimposed epitaxial layers for forming a collector layer (1) of the n.sup.+ type, an emitter layer (3) of the n-type, the formation of localized implantations of the p.sup.+ type to obtain the base regions (31,30) or of the n.sup.+ type to obtain collector contact islands (20). This method also includes the formation by a controlled etching into a germanium layer (50) formed at the surface of these layers, of pads having a profile such that their tips define with a very high precision openings (E.sub.1), of which the distance (E.sub.0) between the edges defines the emitter contact region, while their edges have a concavity turned towards the exterior of the device.
REFERENCES:
patent: 3627647 (1971-12-01), Reuter
patent: 4032957 (1977-06-01), Yagi et al.
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4818712 (1989-04-01), Tully
IBM Technical Disclosure Bulletin, vol. 27, No. 7B, Dec. 1984, pp. 4432-4433.
Boissenot Philippe
Rabinzohn Patrick
Selle Daniel
Biren Steven R.
Hearn Brian E.
Nguyen Tuan
U.S. Philips Corp.
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