Method of manufacturing a semiconductor device of the hetero-jun

Fishing – trapping – and vermin destroying

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437944, 437917, 437 32, 148DIG100, 148DIG10, 357 71, 357 35, H01L 2972, H01L 2128

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048898210

ABSTRACT:
A method of manufacturing a hetero-junction bipolar transistor especially of gallium arsenide comprising the formation of epitaxial layers superimposed to obtain a collector layer (1) of the n.sup.+ type, an emitter layer (3) of the n-type, the formation of localized implantations of the p.sup.+ type to obtain the base region (31, 30) or of the n.sup.+ type to form collector contact islands (20). This method also including the formation of base contacts B (70) having the dimensions B.sub.0 and located at a relative distance of E.sub.1, then covering the metallization (70) of pads (81) of silica (Si.sub.3 N.sub.4) having edges perpendicular to the plane of the layers on which bear spacers of silicon nitride (Si.sub.3 N.sub.4) (52) having dimensions h.sub.1 defining with a high precision the dimension E.sub.0 =B.sub.1 -2h of the emitter contact E and the distances between the different collector (90), base (70) and emitter (90) contacts C, B and E, respectively.

REFERENCES:
patent: 3627647 (1971-12-01), Reuter
patent: 4032957 (1977-06-01), Yagi et al.
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4818712 (1989-04-01), Tully

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