Semiconductor pattern definition by selective anodization

Details Semiconductor pattern definition by selective anodization Semiconductor pattern definition by selective anodization

1982-09-23

1984-07-10

Tufariello, Thomas

Chemistry: electrical and wave energy

Processes and products

C25D 1132

Patent

active

044591810

ABSTRACT:
A pattern is defined in a semiconductor wafer by forming one or more notches from a top major surface downwardly beyond the lowermost junction between opposite conductivity type regions, and by anodizing the wafer to provide a columnated porous region below and substantially confined to the lateral dimension of each notch. Anodization current flows substantially vertically, without significant lateral spreading. The porous regions are oxidized to afford well-defined vertically bordered insulative regions separating the lowermost junctions on opposite sides thereof.

REFERENCES:
patent: 3506887 (1970-04-01), Gutteridge
patent: 4028149 (1977-06-01), Deines
patent: 4104090 (1978-08-01), Pogge
patent: 4242791 (1981-01-01), Horng
C. Hu, "A Parametric Study of Power MOSFETs", IEEE Electron Device Conference, Paper CH1461-3/79, 0000-0385.
IEEE Transactions Electron Devices, vol. ED-25, No. 10, Oct. 1978.
Ammar & Rogers, "UMOS Transistors on Silicon", Transactions IEEE, Ed-27, pp. 907-914, May 1980.
"Oxidized Porous Silicon Isolates Better Than Sapphire", Charles Cohen, Electronics, Jan. 27, 1981, pp. 77-78.

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