Trench memory cell

Details Trench memory cell Trench memory cell

1988-12-30

1990-09-18

Hille, Rolf

357 52, 357 48, 357 236, H01L 2934, H01L 2704, H01L 2978

Patent

active

049582127

ABSTRACT:
An improved memory cell layout (54) is formed including a trench cell (60) formed in a semiconductor substrate (58). The memory cell layout (54) includes a bitline (56) and a wordline (62) for storing and accessing charge. The charge is stored on a capacitor formed from a conductor (68), an insulating region (70) and a semiconductor substrate (58). Bitline (56) is primarily tangential to a trench cell (60), or may surround the periphery thereof. A wordline (62) overlies trench cell (60) and extends therein, and further may be formed of a width narrower than trench cell (60).

REFERENCES:
patent: 4721987 (1988-01-01), Baglee et al.
patent: 4830978 (1989-05-01), Teng et al.

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